SEC-TID

TID Effect in SOI Technology

In this paper, a brief overview of TID effect in SOI technology is presented. The introduction of buried oxide(BOX) adds vulnerability to TID effect in SOI transistors because of its large thickness. Also the BOX introduces special charge traps, the delocalized spin centers, which in most cases are positive. The charge buildup in BOX could increase the leakage current in front gate transistor i...

TiD - Documentation of TOBI Interface D

4 TiD Message 2 4.1 Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 4.2 Version . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 4.3 Description . . . . . . . . . . . . . . . . . . ....

Sec Sect " ' - -

SEC Biology 09 Ls

Level of sec mRNA

expression at the level of sec mRNA. staphylococcal enterotoxin C gene (sec) High sodium chloride concentrations inhibit